Author Affiliations
Abstract
1 Key Laboratory of Space Applied Physics and Chemistry, Ministry of Education, and Shaanxi Key Laboratory of Optical Information Technology, School of Science, Northwestern Polytechnical University, Xi’an 710072, China
2 Université Polytechnique Hauts de France, IEMN DOAE CNRS, Campus Le Mont Houy, 59309, Valenciennes Cedex, France
Goodness of fit is demonstrated for theoretical calculation of z-scan data based on beams propagating in the nonlinear medium and the Fresnel–Kirchhoff diffraction integral in experiments with high nonlinear refraction and absorption. The constancy of nonlinear optical parameters is achieved regardless of sample thickness and laser intensity, which clarifies the physical significance of optical parameters. We have obtained γ = 2.0 × 10?19 m2/W and β = 5.0 × 10?13 m/W for carbon disulfide excited by a pulsed laser at 800 nm with pulse duration of 35 fs, which are independent of sample thickness and laser intensity. Affirming constancy of the extracted parameters to the incident light intensity may become a practice to verify the goodness of the z-scan experiment.
z-scan technique nonlinear refraction and absorption nonlinear optical coefficient carbon disulfide 
Chinese Optics Letters
2020, 18(7): 071903
Author Affiliations
Abstract
1 Key Laboratory of Space Applied Physics and Chemistry, Ministry of Education, and Shaanxi Key Laboratory of Optical Information Technology, School of Science, Northwestern Polytechnical University, Xi’an 710072, China
2 Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
3 LEES Program, Singapore-MIT Alliance for Research & Technology (SMART), Singapore 138602, Singapore
Plasmon induced hot electrons have attracted a great deal of interest as a novel route for photodetection and light-energy harvesting. Herein, we report a hot electron photodetector in which a large array of nanocones deposited sequentially with aluminum, titanium dioxide, and gold films can be integrated functionally with nanophotonics and microelectronics. The device exhibits a strong photoelectric response at around 620 nm with a responsivity of 180 μA/W under short-circuit conditions with a significant increase under 1 V reverse bias to 360 μA/W. The increase in responsivity and a red shift in the peak value with increasing bias voltage indicate that the bias causes an increase in the hot electron tunneling effect. Our approach will be advantageous for the implementation of the proposed architecture on a vast variety of integrated optoelectronic devices.
Photonics Research
2019, 7(3): 03000294

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